2N5454 dual n-channel jfet general purpose amplifier general description matched fet pairs lor differential amplifiers. this family of general purpose fets is characterized for low and medi- um frequency differential amplifier applications requiring low drift and low offset voltage. pin configuration to-71 ,,-mm \l 0, ' 6037 ordering information features ? low olfset voltage ? low drift ? low capacitance ? low output conductance absolute maximum ratings (ta-26c unless otherwise noted) gate-source or gate drain voltage (note 1) -50v gate current (note 1) 60ma storage temperature range -65'c to + zoo'c operating temperature range - ss'c to +150'c lead temperature (soldering, 10aec) -i- 300'c one side both sides power dissipation (tc - 85'c) .. 250mw 500mw derate above 25'c 2.9mw/'c 4.3mw/c note: satttei stxvf those i/sled under "absolute mm/mum ratings" may cause permanent damage to the device. these are stress ratings only and functional off/alien of uie device it these er any other eonditimf ibovethoielridhatedhtheapeistjonaliectcniotlliespecttlcetlaratanat implied. exposure to absolute iromnum fating mndxcns lor extendedperi- ods may affect device retlau/ltf. electrical characteristics (ta-250c unless otherwise specified) symbol loss bvass vescoh) vas vgsio less param*tir gate havana currant ta=160c cote-source breakdown voltage gate-source cutoff voltaga gate-source voltage gate-source forward voltage saturation drain current taat condition! vas?--30v.vds=0 vrj8-0,l8=-1|?a vus=20v, !d-lna vd3-20v, lo^sojia vos-o.ia=ima vds-mv.vqs-o 2n64s2 mln -60 -1 -0.2 0.6 max -100 -200 -4.e -? 2 5.0 2nk453 mln -so -1 -0.2 0.5 max -100 _200 -4.5 -4.2 2 5.0 2n6454 mm -50 -1 -0.2 0,6 max -100^ -200 -4.5 -4.2 2 5.0 unite pa na v ma nj semi-conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however mj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n j semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
2n5452-2N5454 electrical characteristics (continued) 0^=25*0 unless otherwise specified) symbol a* so, cto cm, cdgo ?n nf idssi/idssz ivosi-vqsj! alvosi-vaszl at 9?1/8ti2 ftnrflimll common-source forward tianrondiirtinc. |(notl)2) common-source output conductance common-source input capacitance (note 2) common-source reverse traratar capacitance (note 2) drain-gate capacitance (note 2) equivalent short circuit input noise voltage common-source spot note* figure (nom 2) drain saturation currant ratio differential qate-source voltage qate-sourc* voltage dht?rantlal change with temperature trareconductance ratio differential output conductance tut cm vds-hw, vas-o vos=20v, 10-200^ vds-zov,vqs-o vtxj=10v.ls-=0 v08-wv.vas=o v6s=?v.vas-0 ro=10mo vds=20v.v88-0 vcs-20v.b-200ua iwoffl f=1khl f- 100mhz f^tkhz f-1mhl f?1khl f=ioom t-apcto^es'c t-aircto -h26-c 1-1 kh* 2ni mln 1000 1000 0,95 0.97 4s2 mot 3000 3.0 1.0 4.0 1.2 1.5 20 05 1.0 s.o 0.4 0.5 1.0 0.25 2ni mln 1000 1000 0.95 0.97 453 mm 3000 3,0 1,0 4.0 1.2 1.6 20 0.5 1.0 10.0 0.8 1.0 1.0 0.2s 2n? mtn 1000 1000 0.8s 0.95 4s4 max 3000 3.0 1.0 4.0 i.a 1.s 20 0.5 1.0 16.0 2.c 2.5 1.0 0.26 unite pa pf nv 35 db mv cs notes: 1. p?r trarnljlor. 2. fof design reference only, not 100? leated.
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